TPC6103 2006-11-16 1 toshiba field effect transistor silicon p channel mos type (u-mos iii) TPC6103 notebook pc applications portable equipment applications ? low drain-source on resistance: r ds (on) = 29 m ? (typ.) ? high forward transfer admittance: |y fs | = 13 s (typ.) ? low leakage current: i dss = ? 10 a (max) (v ds = ? 12 v) ? enhancement mode: v th = ? 0.5 to ? 1.2 v (v ds = ? 10 v, i d = ? 200 a) absolute maximum ratings (ta = 25c) characteristics symbol rating unit drain-source voltage v dss ? 12 v drain-gate voltage (r gs = 20 k ? ) v dgr ? 12 v gate-source voltage v gss 8 v dc (note 1) i d ? 5.5 drain current pulse (note 1) i dp ? 22 a drain power dissipation (t = 5 s) (note 2a) p d 2.2 w drain power dissipation (t = 5 s) (note 2b) p d 0.7 w single pulse avalanche energy (note 3) e as 5.3 mj avalanche current i ar ? 2.75 a repetitive avalanche energy (note 4) e ar 0.22 mj channel temperature t ch 150 c storage temperature range t stg ? 55~150 c note: using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings. please design the appropriate reliability upon reviewing the toshiba semiconductor reliability handbook (?handling precautions?/derating concept and methods) and individual reliability data (i.e. reliability test report and estimated failure rate, etc). thermal characteristics circuit configuration characteristics symbol max unit thermal resistance, channel to ambient (t = 5 s) (note 2a) r th (ch-a) 56.8 c/w thermal resistance, channel to ambient (t = 5 s) (note 2b) r th (ch-a) 178.5 c/w note: (note 1), (note 2), (note 3), (note 4) and (note 5): see the next page. this transistor is an electrostatic-sensitive device. please handle with caution. unit: mm jedec D jeita D toshiba 2-3t1a weight: 0.011 g (typ.) 6 4 1 2 3 5
TPC6103 2006-11-16 2 electrical characteristics (ta = 25c) characteristics symbol test condition min typ. max unit gate leakage current i gss v gs = 8 v, v ds = 0 v ? ? 10 a drain cut-off current i dss v ds = ? 12 v, v gs = 0 v ? ? ? 10 a v (br) dss i d = ? 10 ma, v gs = 0 v ? 12 ? ? drain-source breakdown voltage v (br) dsx i d = ? 10 ma, v gs = 8 v ? 4 ? ? v gate threshold voltage v th v ds = ? 10 v, i d = ? 200 a ? 0.5 ? ? 1.2 v r ds (on) v gs = ? 1.8 v, i d = ? 1.4 a ? 65 90 r ds (on) v gs = ? 2.5 v, i d = ? 2.8 a ? 42 55 drain-source on resistance r ds (on) v gs = ? 4.5 v, i d = ? 2.8 a ? 29 35 m ? forward transfer admittance |y fs | v ds = ? 10 v, i d = ? 2.8 a 6.5 13 ? s input capacitance c iss ? 1520 ? reverse transfer capacitance c rss ? 330 ? output capacitance c oss v ds = ? 10 v, v gs = 0 v, f = 1 mhz ? 380 ? pf rise time t r ? 9.5 ? turn-on time t on ? 16 ? fall time t f ? 28 ? switching time turn-off time t off duty < = = 10 s ? 74 ? ns total gate charge (gate-source plus gate-drain) q g ? 20 ? gate-source charge q gs ? 15 ? gate-drain (?miller?) charge q gd v dd ? ? 10 v, v gs = ? 5 v, i d = ? 5.5 a ? 5 ? nc source-drain ratings and characteristics (ta = 25c) characteristics symbol test condition min typ. max unit drain reverse current pulse (note 1) i drp ? ? ? ? 22 a forward voltage (diode) v dsf i dr = ? 5.5 a, v gs = 0 v ? ? 1.2 v r l = 2.1 ? v dd ? ? 6 v ? 5 v v gs 0 v 4.7 ? i d = ? 2.8 a v out
TPC6103 2006-11-16 3 marking (note 5) note 1: ensure that the channel temperature does not exceed 150c. note 2: (a) device mounted on a glass-epoxy board (a) (t = 5 s) (b) device mounted on a glass-epoxy board (b) (t = 5 s) note 3: v dd = ? 10 v, t ch = 25c (initial), l = 0.5 mh, r g = 25 ? , i ar = ? 2.75 a note 4: repetitive rating: pulse width limited by maximum channel temperature note 5: ? on lower left of the marking indicates pin 1. (a) fr-4 25.4 25.4 0.8 unit: (mm) (b) fr-4 25.4 25.4 0.8 unit: (mm) part no. (or abbreviation code) s3c a line indicates lead (pb)-free package or lead (pb)-free finish. lot code (month) lot no. pin #1 lot code (year) product-specific code
TPC6103 2006-11-16 4 forward transfer admittance |y fs | (s) drain-source voltage v ds (v) drain-source voltage v ds (v) i d ? v ds drain current i d (a) drain-source voltage v ds (v) i d ? v ds drain current i d (a) gate-source voltage v gs (v) i d ? v gs drain current i d (a) gate-source voltage v gs (v) v ds ? v gs drain current i d (a) |y fs | ? i d drain current i d (a) drain-source on resistance r ds (on) (m ? ) r ds (on) ? i d 0 0 ? 1 ? 2 ? 3 ? 4 ? 5 ? 0.4 ? 0.8 ? 1.2 ? 2.0 common source ta = 25c pulse test v gs = ? 1.4 v ? 4, ? 4.5 ? 5 ? 1.6 ? 3 ? 2.5 ? 2 ? 1.9 ? 1.8 ? 1.7 ? 1.6 ? 1.5 0 ? 1 ? 2 ? 3 ? 4 ? 5 ? 1.7 ? 2.5 ? 1.6 v gs = ? 1.4 v ? 2 ? ? 2 ? 4 ? 6 ? 8 ? 10 common source ta = 25c pulse test ? 1.9 ? 1.8 ? ? = ? 55c 0 ? 2 ? 4 ? 6 ? 8 ? 10 0 ? 0.5 ? 1 ? 1.5 ? 2 ? 2.5 100c 25c common source v ds = ? 10 v pulse test 0 ? 0.2 ? 0.4 ? 0.6 ? 0.8 ? 1 0 ? 2 ? 4 ? 6 ? 8 ? 10 ? 1.1 a ? 2.2 a common source ta = 25c pulse test i d = ? 4.5 a 0.1 1 10 100 ? 0.1 ? 1 ? 10 ? 100 100c 25c ta = ? 55c common source v ds = ? 10 v pulse test 0.3 3 30 ? 0.3 ? 3 ? 30 0.01 1 ? 0.1 ? 1 ? 10 ? 100 0.1 ? 2.5 v v gs = ? 4.5 v ? 1.8 v common source ta = 25c pulse test 0.03 0.3 ? 0.3 ? 3 ? 30
TPC6103 2006-11-16 5 ambient temperature ta ( c) r ds (on) ? ta drain-source on resistance r ds (on) (m ? ) drain-source voltage v ds (v) i dr ? v ds drain reverse current i dr (a) drain-source voltage v ds (v) capacitance ? v ds capacitance c (pf) ambient temperature ta ( c) v th ? ta gate threshold voltage v th (v) ambient temperature ta ( c) p d ? ta drain power dissipation p d (w) gate-source voltage v gs (v) total gate charge q g (nc) dynamic input/output characteristics drain-source voltage v ds (v) 10 100 1000 10000 ? 0.1 ? 1 ? 10 ? 100 c rss c oss c iss common source ta = 25c f = 1 mhz v gs = 0 v ? 0.3 ? 3 ? 30 30 300 3000 0 ? 0.5 ? 1.5 ? 2.0 ? 80 ? 40 0 40 80 160 common source v ds = ? 10 v i d = ? 200 a pulse test 120 ? 1.0 ? 1 ? 10 0 0.4 0.8 1.2 1.6 2.0 ? 100 common source ta = 25c pulse test ? 2.0 ? 1 v gs = 0 v ? 4.5 ? 3 ? 30 ? 1.8 0 0 0.5 1 1.5 2 2.5 40 80 120 160 (1) device mounted on a glass-epoxy board (a) (note 2a) (2) device mounted on a glass-epoxy board (b) (note 2b) (1) t = 5 s (2) t = 5 s (1) dc (2) dc 160 0 40 80 120 ? 80 ? 40 0 40 80 160 120 common source pulse test v gs = ? 1.8 v i d = ? 1.4a ? 2.8 a i d = ? 1.4a ? 5.5 a ? 2.8 a i d = ? 1.4 a, ? 2.8 a, ? 5.5 a ? 2.5 v ? 4.5 v 0 0816 ? 4 ? 12 ? 20 0 ? 2 ? 6 ? 10 ? 8 24 32 40 ? 8 ? 16 ? 4 ? 5 v v dd = ? 10 v v gs v dd = ? 10 v ? 5 ? 2.5 v ? 2.5 v common source i d = ? 5.5 a ta = 25c pulse test
TPC6103 2006-11-16 6 ? 0.001 ? 0.01 ? 0.03 ? 0.1 ? 0.3 ? 1 ? 3 ? 10 ? 100 ? 30 ? 0.003 ? 0.01 ? 0.03 ? 0.1 ? 0.3 ? 10 ? 1 ? 3 ? 100 ? 30 * : single nonrepetitive pulse ta = 25c curves must be derated linearly with increase in temperature ? * 10 ms * 1 ms * v dss max r th ? t w pulse width t w (s) transient thermal impedance r th (c/w) 0.1 0.001 0.01 0.1 10 100 1000 1 0.3 3 30 100 300 1000 single pulse device mounted on a glass- epoxy board (b) (note 2b) 1 10 safe operating area drain-source voltage v ds (v) drain current i d (a) device mounted on a glass- epoxy board (a) (note 2a)
TPC6103 2006-11-16 7 ? the information contained herein is subject to change without notice. ? the information contained herein is presented only as a guide for the applications of our products. no responsibility is assumed by toshiba for any infringements of patents or other rights of the third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of toshiba or others. ? toshiba is continually working to improve the quality an d reliability of its products. nevertheless, semiconductor devices in general can malfunction or fail due to their inherent electrical sensitivity and vulnerability to physical stress. it is the responsibility of the buyer, when utiliz ing toshiba products, to comply with the standards of safety in making a safe design for the entire system, and to avoid situations in which a malfunction or failure of such toshiba products could cause loss of human life, bodily injury or damage to property. in developing your designs, please ensure that toshiba products are used within specified operating ranges as set forth in the most recent toshiba products specifications. also, please keep in mind the precautions and conditions set forth in the ?handling guide for semiconductor devices,? or ?toshiba semiconductor reliability handbook? etc.. ? the toshiba products listed in this document are intended for usage in general electronics applications (computer, personal equipment, office equipment, measuring equipment, industrial robotics, domestic appliances, etc.). these toshiba products are neither intended nor warranted for usage in equipment that requires extraordinarily high quality and/or reliab ility or a malfunction or failure of which may cause loss of human life or bodily injury (?unintended usage?). unintended usage include atomic energy control instruments, airplane or spaceship instruments, transportation instruments, traffic signal instruments, combustion control instruments, medical instruments, all types of safety devices, etc.. unintended usage of toshiba products listed in this document shall be made at the customer?s own risk. ? toshiba products should not be embedded to the downstream products which are prohibited to be produced and sold, under any law and regulations. 030619eaa restrictions on product use
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